X-RAY MASK TECHNOLOGY - LOW-STRESS TUNGSTEN DEPOSITION AND SUB-HALF-MICRON ABSORBER FABRICATION BY SINGLE-LAYER RESIST

被引：3

作者：

SUZUKI, K

SHIMIZU, Y

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 3-4期

关键词：

X-RAY MASK; X-RAY LITHOGRAPHY; TUNGSTEN PATTERN; CRITICAL DIMENSION; ECR PLASMA ETCHING; X-RAY ABSORBER PATTERN;

D O I：

10.1016/0167-9317(91)90006-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A precise and simple X-ray mask fabrication technology has been developed. This technology employs low-wafer-temperature (-25-degrees-C) ECR plasma etching for a 0.7-mu-m thick X-ray absorber tungsten pattern using a single-layer-resist mask. The linewidth shift from the resist pattern to the tungsten pattern is approximately 0.02-mu-m. The stress in the tungsten has been controlled to levels as small as 2-3 x 10(8) dyn/cm2.

引用

页码：207 / 214

页数：8

共 5 条

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[2]

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[3]

Luthje, Burns, Harms, Kohler, Mescheder, Mackens, Stuck, X-ray mask technology: Precise etching of sub-half-micron tungsten absorber features, Microelectronic Engineering, 11, (1990)

[4]

Tsujimoto, Tachi, Okudaira, Digest of Papers, 1988 1st MicroProcess Conf., (1988)

[5]

Suzuki, Matsui, J. Vac. Sci. Technol., 4, 1, (1986)

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