FREE CARRIER REDUCTION IN VACUUM-ANNEALED S-DOPED, SN-DOPED, AND GE-DOPED (100) INP

被引：19

作者：

SCHWARTZ, GP ^{[1
]}

GUALTIERI, GJ ^{[1
]}

DUBOIS, LH ^{[1
]}

BONNER, WA ^{[1
]}

BALLMAN, AA ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 07期

关键词：

D O I：

10.1149/1.2115945

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1716 / 1720

页数：5

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