MODE-LOCKING OF SELF-GENERATED OSCILLATIONS IN A SEMICONDUCTOR MODEL FOR LOW-TEMPERATURE IMPURITY BREAKDOWN

被引：5

作者：

NABER, H ^{[1
]}

SCHOLL, E ^{[1
]}

机构：

[1] TECH UNIV BERLIN, INST THEORET PHYS, W-1000 BERLIN 12, GERMANY

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1990年 / 78卷 / 02期

关键词：

D O I：

10.1007/BF01307851

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The nonlinear dynamic behaviour of a model for self-generated, spatially coupled current oscillations in two separated parts of a semiconductor is analysed. The model involves impurity impact ionization, nonlinear energy relaxation of hot carriers, and energy exchange between the two subsystems. Quasiperiodicity and mode-locking are obtained, and characterized by a suitably defined rotation number and a spectral bifurcation diagram. The mode-locking structure is found to obey the Farey tree ordering, and can be understood on the basis of the circle map theory, assuming a particular path in the two-dimensional phase diagram of the circle map. © 1990 Springer-Verlag.

引用

页码：305 / 315

页数：11

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