PREPARATION OF THIN YTTRIA-STABILIZED ZIRCONIA FILMS BY VAPOR-PHASE ELECTROLYTIC DEPOSITION

被引：24

作者：

OGUMI, Z

UCHIMOTO, Y

TSUJI, Y

TAKEHARA, Z

机构：

[1] Department of Industrial Chemistry, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto

来源：

SOLID STATE IONICS | 1992年 / 58卷 / 3-4期

关键词：

D O I：

10.1016/0167-2738(92)90139-G

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Yttria-stabilized zirconia (YSZ) thin films were prepared by vapor-phase-electrolytic deposition (VED) at the temperature of 1100-degrees-C under reduced pressure using ZrCl4, YCl3 and H2O gases as source materials. Porous calcia-stabilized zirconia was used as a substrate to prepare thin YSZ film. The deposition rate of VED process was 7 mum h-1 which was about four times faster than that of CVD-EVD process under the same conditions. The YSZ thin film prepared by VED process was pinhole-free and its ionic conductivity was nearly equal to that of the sintered YSZ.

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页码：345 / 350

页数：6

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