17.1-PERCENT EFFICIENT CU(IN,GA)SE-2- BASED THIN-FILM SOLAR-CELL

被引:62
作者
TUTTLE, JR [1 ]
CONTRERAS, MA [1 ]
GILLESPIE, TJ [1 ]
RAMANATHAN, KR [1 ]
TENNANT, AL [1 ]
KEANE, J [1 ]
GABOR, AM [1 ]
NOUFI, R [1 ]
机构
[1] MARTIN MARIETTA TECHNOL INC,DENVER,CO 80201
来源
PROGRESS IN PHOTOVOLTAICS | 1995年 / 3卷 / 04期
关键词
D O I
10.1002/pip.4670030404
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report a world-record total-area efficiency of 17.1% for a polycrystalline thin-film Cu(In,Ga)Se-2-based photovoltaic solar cell. The incorporation of Ga to raise the absorber bandgap has been accomplished successfully and in such a manner that an open-circuit voltage of 654 mV and a fill factor of greater than 77% have been achieved. We describe briefly the deposition process, the device structure, and the device performance characteristics.
引用
收藏
页码:235 / 238
页数:4
相关论文
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