EPITAXIAL DEPOSITION OF GAAS IN AN ARGON ATMOSPHERE

被引:18
作者
TAYLOR, RC
机构
关键词
D O I
10.1149/1.2426610
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:410 / &
相关论文
共 6 条
[1]  
EFFER D, 1965, J ELECTROCHEM SOC, V112, P1021
[2]   PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].
FINCH, WF ;
MEHAL, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817
[4]   The chlorides of gallium [J].
Laubengayer, AW ;
Schirmer, FB .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1940, 62 :1578-1583
[5]  
SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1
[6]   SHALLOW DONOR LEVELS AND HIGH MOBILITY IN EPITAXIAL GALLIUM ARSENIDE [J].
WHITAKER, J ;
BOLGER, DE .
SOLID STATE COMMUNICATIONS, 1966, 4 (04) :181-&