ISOTHERMAL ANNEALING OF E'1 DEFECTS IN ION-IMPLANTED SIO2

被引：17

作者：

DEVINE, RAB

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1984年 / 1卷 / 2-3期

关键词：

D O I：

10.1016/0168-583X(84)90095-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：378 / 382

页数：5

共 20 条

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