SECONDARY-ELECTRON EMISSION DURING ION-IMPLANTATION

被引:4
作者
HEIMANN, PA
BLAKESLEE, J
机构
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
关键词
D O I
10.1149/1.2108675
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
SEMICONDUCTOR MATERIALS
引用
收藏
页码:779 / 780
页数:2
相关论文
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[3]   ELECTRON-EMISSION FROM ION-BOMBARDED ALUMINUM [J].
SVENSSON, B ;
HOLMEN, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6928-6933
[4]  
WILSON RG, 1973, ION BEAMS APPLICATIO
[5]  
YOSHIZOMA M, 1983, 14TH S ION IMPL SUBM