COMPARISON OF THE WATER EFFECT ON THE RESISTANCE OF DIFFERENT SEMICONDUCTING METAL-OXIDES

被引：16

作者：

RETI, F ^{[1
]}

FLEISCHER, M ^{[1
]}

GERBLINGER, J ^{[1
]}

LAMPE, U ^{[1
]}

VARHEGYI, EB ^{[1
]}

PERCZEL, IV ^{[1
]}

MEIXNER, H ^{[1
]}

GIBER, J ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,D-81739 MUNICH,GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 26卷 / 1-3期

关键词：

WATER EFFECT; RESISTANCE; METAL OXIDES;

D O I：

10.1016/0925-4005(94)01567-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work the time and temperature dependence of the complex interaction between water and different oxide semiconductor surfaces was examined by resistance measurements in inert and in oxygen containing atmospheres. The experimental temperature varied between 823 and 1093 K. The water content of the atmospheric pressure nitrogen or 5% oxygen containing nitrogen carrier was 15 or 30 mbar.

引用

页码：103 / 107

页数：5

共 8 条

[1] THE MECHANISM OF THE INTERACTION BETWEEN CO AND AN SNO2 SURFACE - THE ROLE OF WATER-VAPOR [J].