LOCAL VIBRATIONAL-MODE SPECTROSCOPY OF SI DONORS AND BE ACCEPTORS IN MBE INAS AND INSB STUDIED BY INFRARED-ABSORPTION AND RAMAN-SCATTERING

被引：14

作者：

ADDINALL, R

MURRAY, R

NEWMAN, RC

WAGNER, J

PARKER, SD

WILLIAMS, RL

DROOPAD, R

DEOLIVEIRA, AG

FERGUSON, I

STRADLING, RA

机构：

[1] Interdisciplinary Res. Centre for Semicond. Mater., Blackett Lab., London

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Samples of InAs and InSb either singly or doubly doped with Si and Be impurities have been studied using FTIR absorption spectroscopy and Raman scattering. Localized vibrational modes of Si-28(In) donors and Be-9(In) acceptors have been identified at 359 and 435 cm-1 respectively in InAs. The two impurities give corresponding lines at 316 and 414 cm-1 in InSb. Comparisons are made with the behaviour of the same impurities in compensated or p-type GaAs. Strong resonance effects relating to the incident photon energy are found in the Raman spectra of Si-28(In) donors.

引用

页码：147 / 154

页数：8

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