MICROWAVE CL2/H2 DISCHARGES FOR HIGH-RATE ETCHING OF INP

被引：36

作者：

CONSTANTINE, C ^{[1
]}

BARRATT, C ^{[1
]}

PEARTON, SJ ^{[1
]}

REN, F ^{[1
]}

LOTHIAN, JR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 18期

关键词：

ETCHING TECHNIQUES; PLASMAS;

D O I：

10.1049/el:19921112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave (2-45GHz) Cl2/H-2 discharges operated in the electron cyclotron resonance condition at low pressure (0.5 mtorr) are shown to yield high-rate (1.5-mu-m min-1) plasma etching of InP at 150-degrees-C with low additional DC bias (-150 V) on the sample. The etched surface morphology and optical quality, and anisotropy of the resultant features are all strong functions of the Cl2-to-H-2 ratio in the discharge.

引用

页码：1749 / 1750

页数：2

共 5 条

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CHAKRABARTI, UK
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REN, F
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[J]. ELECTRONICS LETTERS, 1992, 28 (05) : 448 - 449
[4] INGAASP/INP LASERS WITH 2 REACTIVE-ION-ETCHED MIRROR FACETS
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