NEW METHOD FOR SOFT-ERROR MAPPING IN DYNAMIC RANDOM-ACCESS MEMORY USING NUCLEAR MICROPROBE

被引：10

作者：

SAYAMA, H

HARA, S

KIMURA, H

OHNO, Y

SATOH, S

TAKAI, M

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

DYNAMIC RANDOM ACCESS MEMORY; SOFT ERROR; SINGLE EVENT UPSET; NUCLEAR MICROPROBE; PROTON MICROPROBE; SOFT-ERROR MAPPING; SECONDARY ELECTRON MAPPING;

D O I：

10.1143/JJAP.31.4541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Locally sensitive positions against soft error in a dynamic random access memory (DRAM) have, for the first time, been investigated using a proton microprobe. Both soft-error (bit-state) mapping and secondary electron mapping images of the investigated area could locally identify sensitive positions against soft error. Two kinds of error modes in a DRAM (i.e., cell mode and bit-line mode) could be directly monitored.

引用

页码：4541 / 4544

页数：4

共 5 条

[1] NUCLEAR MICROPROBE IMAGING OF SINGLE-EVENT UPSETS [J].