A NEWLY DEVELOPED 300 KV FIELD-EMISSION ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPE

被引：7

作者：

BANDO, Y ^{[1
]}

KITAMI, Y ^{[1
]}

TOMITA, T ^{[1
]}

HONDA, T ^{[1
]}

ISHIDA, Y ^{[1
]}

机构：

[1] JEOL LTD, TOKYO 196, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 11B期

关键词：

300 KV FIELD-EMISSION ANALYTICAL ELECTRON MICROSCOPE; HIGH-SPATIAL-RESOLUTION ANALYSIS; SILICON NITRIDE; INDIUM IRON ZINC OXIDE;

D O I：

10.1143/JJAP.32.L1704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to carry out high-spatial-resolution analysis at the nanometer level, a 300 kV analytical transmission electron microscope with a field-emission gun has been developed. Some characteristic features of the new microscope are described and the results of the nanometer-level analysis are shown for silicon nitride and indium iron zinc oxide.

引用

页码：L1704 / L1706

页数：3

共 6 条

[1] ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY IN MATERIALS SCIENCE
BANDO, Y
[J]. MATERIALS TRANSACTIONS JIM, 1990, 31 (07): : 538 - 544
[2] ISAKOZAWA S, 1989, 47TH P ANN M EL MICR, P112
[3] OBSERVATION OF A 0.055-NM SPACING LATTICE IMAGE IN GOLD USING A FIELD-EMISSION ELECTRON-MICROSCOPE
KAWASAKI, T
MATSUDA, T
ENDO, J
TONOMURA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03): : L508 - L510
[4] KIMIZUKA N, 1993, IN PRESS J SOLID STA
[5] MURAKOSHI H, 1992, 50TH P ANN M EL MICR, P936
[6] TOMITA T, 1990, 12TH P INT C EL MICR, P94

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