SOME REMARKS ON HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION

被引：6

作者：

HAZMAN, S

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(67)90088-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / &

共 7 条

[1] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES
FLETCHER, NH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872
[2] HAZMAN S, 1965, THESIS HUNGARIAN ACA
[3] JOHNSCHER K, 1958, J ELECTRON CONTROL, V5, P1
[4] A NOTE ON THE EXTENDED THEORY OF THE JUNCTION TRANSISTOR
MISAWA, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1956, 11 (07) : 728 - 739
[5] SHOCKLEY W, 1951, ELECTRONS HOLES SEMI, P308
[6] HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION
VANVLIET, KM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (03) : 185 - &
[7] ON THE VARIATION OF JUNCTION-TRANSISTOR CURRENT-AMPLIFICATION FACTOR WITH EMITTER CURRENT
WEBSTER, WM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06): : 914 - 920