SEMICONDUCTING SILICIDE SILICON HETEROSTRUCTURES - GROWTH, PROPERTIES AND APPLICATIONS

被引：144

作者：

DERRIEN, J ^{[1
]}

CHEVRIER, J ^{[1
]}

LETHANH, V ^{[1
]}

MAHAN, JE ^{[1
]}

机构：

[1] UNIV AIX MARSEILLE 2,CTR RECH MECANISMES CROISSANCE CRISTALLINE,CNRS,LAB PROPRE,F-13288 MARSEILLE 09,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90259-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

Semiconducting silicides epitaxially grown on silicon may provide alternatives for integrated optoelectronic devices. The structure and the physical properties of thin films of some epitaxial semiconducting silicides, beta-FeSi2, ReSi2 and CrSi2, are reviewed in the light of results obtained with a large variety of in situ and ex situ surface techniques.

引用

页码：382 / 393

页数：12

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