RATE CONSTANTS FOR THE REACTIONS OF SIH AND SIH2 WITH SIH4 IN A LOW-PRESSURE SIH4 PLASMA

被引:34
作者
NOMURA, H
AKIMOTO, K
KONO, A
GOTO, T
机构
[1] Department of Information Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho
关键词
D O I
10.1088/0022-3727/28/9/027
中图分类号
O59 [应用物理学];
学科分类号
摘要
From the laser-induced fluorescence measurements of the decay rate of SIH2 and SIH densities in the afterglow of a RF SiH4-Ar discharge, the rate constants for the reactions of SIH2 and SiH with SiH4 have been determined at pressures below 1 Torr. The rate constants obtained at 70 mTorr for the SiH2 + SiH4 and SIH + SiH4 reactions are 4.3 x 10(-11) and 4.8 x 10(-11) cm(3) s(-1) per molecule, respectively. The rate constants of the two reactions decrease with decreasing pressure in a manner consistent with the high-pressure (greater than or equal to 1 Torr) data available in the literature, indicating that, despite the present low-pressure conditions, the three-body association reactions producing, respectively, Si2H6 and Si2H5 are the dominant reaction channels. Measurements were also carried out using a SiH4-He discharge at 200 and 400 mTorr, giving rate constants somewhat smaller than those obtained using a SiH4-Ar discharge, possibly because of incomplete thermalization of SIH2 and SiH. The SiHx (x = 0-3) production frequencies in SiH4 plasmas are discussed on the basis of the measured reaction rate constants.
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页码:1977 / 1982
页数:6
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