3.0 PS SWITCHING OPERATION IN ALL-NB JOSEPHSON LOGIC GATES

[1] SUB-10 PS HIGH-GAIN DIRECT-COUPLED JOSEPHSON LOGIC GATE [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 291 - 292

[2] 5.6 PS GATE DELAY ALL REFRACTORY JOSEPHSON OR GATE WITH MODIFIED VARIABLE THRESHOLD LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L421 - L422

[3] KURODA K, 1986, 18TH C SOL STAT DEV, P443

[4] NAGATA K, 1985, IEEE ELECTR DEVICE L, V6, P94, DOI 10.1109/EDL.1985.26055

[5] NB/AL-OXIDE/NB TUNNEL-JUNCTIONS FOR JOSEPHSON INTEGRATED-CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L70 - L72

[6] MATERIALS AND FABRICATION PROCESSES FOR NB-SI-NB SNAP DEVICES [J]. IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) : 650 - 651

[7] TARUTANI Y, 1984, 1LTH P C SOL STAT DE, P615

[8] INTRINSIC STRESS OF MAGNETRON-SPUTTERED NIOBIUM FILMS [J]. THIN SOLID FILMS, 1979, 64 (01) : 103 - 110

[1] SUB-10 PS HIGH-GAIN DIRECT-COUPLED JOSEPHSON LOGIC GATE [J]. ELECTRONICS LETTERS, 1983, 19 (08) : 291 - 292

[2] 5.6 PS GATE DELAY ALL REFRACTORY JOSEPHSON OR GATE WITH MODIFIED VARIABLE THRESHOLD LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L421 - L422

[3] KURODA K, 1986, 18TH C SOL STAT DEV, P443

[4] NAGATA K, 1985, IEEE ELECTR DEVICE L, V6, P94, DOI 10.1109/EDL.1985.26055

[5] NB/AL-OXIDE/NB TUNNEL-JUNCTIONS FOR JOSEPHSON INTEGRATED-CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L70 - L72

[6] MATERIALS AND FABRICATION PROCESSES FOR NB-SI-NB SNAP DEVICES [J]. IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) : 650 - 651

[7] TARUTANI Y, 1984, 1LTH P C SOL STAT DE, P615

[8] INTRINSIC STRESS OF MAGNETRON-SPUTTERED NIOBIUM FILMS [J]. THIN SOLID FILMS, 1979, 64 (01) : 103 - 110