4.5 GBIT/S MODELOCKED EXTENDED-CAVITY LASER WITH A MONOLITHICALLY INTEGRATED ELECTROABSORPTION MODULATOR

被引：7

作者：

HANSEN, PB

RAYBON, G

KOREN, U

MILLER, BI

YOUNG, MG

NEWKIRK, MA

CHIEN, MD

TELL, B

BURRUS, CA

机构：

[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 07期

关键词：

OPTICAL MODULATION; INTEGRATED OPTOELECTRONICS; LASERS;

D O I：

10.1049/el:19930427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electroabsorption modulator has been monolithically integrated with an extended-cavity laser, which incorporates a Bragg reflector. Actively modelocked at the fundamental cavity resonance frequency of 4.5 GHz, the laser provides a train of 6.3 ps pulses with a centre wavelength of 1544 nm onto which data is encoded by the modulator. This 4. 5 Gbit/s single-chip transmitter is suitable for systems employing short optical pulses.

引用

收藏

页码：639 / 640

页数：2

相关论文

共 12 条

[1] SUBPICOSECOND MONOLITHIC COLLIDING-PULSE MODE-LOCKED MULTIPLE QUANTUM-WELL LASERS [J].

CHEN, YK ;

WU, MC ;

TANBUNEK, T ;

LOGAN, RA ;

CHIN, MA .

APPLIED PHYSICS LETTERS, 1991, 58 (12) :1253-1255

[2] COMPARISON OF TIMING JITTER IN EXTERNAL AND MONOLITHIC CAVITY MODE-LOCKED SEMICONDUCTOR-LASERS [J].

DERICKSON, DJ ;

MORTON, PA ;

BOWERS, JE ;

THORNTON, RL .

APPLIED PHYSICS LETTERS, 1991, 59 (26) :3372-3374

[3] 5.5-MM LONG INGAASP MONOLITHIC EXTENDED-CAVITY LASER WITH AN INTEGRATED BRAGG-REFLECTOR FOR ACTIVE MODE-LOCKING [J].

HANSEN, PB ;

RAYBON, G ;

KOREN, U ;

MILLER, BI ;

YOUNG, MG ;

CHIEN, M ;

BURRUS, CA ;

ALFERNESS, RC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (03) :215-217

[4]

HANSEN PB, 1992, P TOP M OPT AMP THEI, P188

[5]

HANSEN PB, 1991, P CLEO BALTIMORE, P610

[6]

JOPSON RM, 1992, P CLEO ANAHEIM

[7] SEMICONDUCTOR PHOTONIC INTEGRATED-CIRCUITS [J].

KOCH, TL ;

KOREN, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) :641-653

[8] GAIN-SWITCHING OF DBR LASER MONOLITHICALLY INTEGRATED WITH ELECTROABSORPTION MODULATOR FOR RZ TRANSMISSION [J].

RAYBON, G ;

HANSEN, PB ;

KOREN, U ;

MILLER, BI ;

YOUNG, MG ;

JOPSON, RM ;

EVANKOW, JD ;

BURRUS, CA .

ELECTRONICS LETTERS, 1992, 28 (02) :188-190

[9] HIGH-POWER AND HIGH-SPEED SEMI-INSULATING BH STRUCTURE MONOLITHIC ELECTROABSORPTION MODULATOR DFB LASER-LIGHT SOURCE [J].

SODA, H ;

FURUTSU, M ;

SATO, K ;

OKAZAKI, N ;

YAMAZAKI, S ;

NISHIMOTO, H ;

ISHIKAWA, H .

ELECTRONICS LETTERS, 1990, 26 (01) :9-10

[10] MONOLITHIC INTEGRATION OF INGAASP INP DISTRIBUTED FEEDBACK LASER AND ELECTROABSORPTION MODULATOR BY VAPOR-PHASE EPITAXY [J].

SUZUKI, M ;

NODA, Y ;

TANAKA, H ;

AKIBA, S ;

KUSHIRO, Y ;

ISSHIKI, H .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) :1277-1285