ELECTRONIC CHARGE-DENSITIES AND TEMPERATURE-DEPENDENCE OF FORBIDDEN (222) REFLECTION IN SILICON AND GERMANIUM

被引：19

作者：

CHELIKOWSKY, JR

COHEN, ML

机构：

[1] LAWRENCE BERKELEY LAB, INORG MAT RES DIV, BERKELEY, CA 94720 USA

[2] UNIV CALIF, DEPT PHYS, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.33.1339

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1339 / 1342

页数：4

共 17 条

[1] ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION [J].

ALDRED, PJE ;

HART, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :239-254

[2] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].

ALDRED, PJE ;

HART, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+

[3]

ANIMALU AEO, 4 SOL STAT THEOR GRO

[4] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].

BATTERMAN, BW ;

CHIPMAN, DR .

PHYSICAL REVIEW, 1962, 127 (03) :690-&

[5] HIGH-RESOLUTION BAND-STRUCTURE AND E2 PEAK IN GE [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1973, 31 (27) :1582-1585

[6]

CHELIKOWSKY JR, TO BE PUBLISHED

[7]

DAWSON B, 1966, P ROY SOC A, V298, P307

[8]

GRAY DE, 1970, AM I PHYSICS HDB, P4

[9] ABSOLUTE MEASUREMENT OF STRUCTURE FACTORS OF SI SINGLE CRYSTAL BY MEANS OF X-RAY PENDELLOSUNG FRINGES [J].

HATTORI, H ;

KURIYAMA, H ;

KATAGAWA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (06) :988-&

[10] ANHARMONICITY AND TEMPERATURE DEPENDENCE OF FORBIDDEN (222) REFLECTION IN SILICON [J].

PHILLIPS, JC .

PHYSICS LETTERS A, 1971, A 37 (05) :434-&

← 1 2 →