ENERGY-LEVEL PARITIES AT L IN PBTE

被引：9

作者：

MARTINEZ, G

COHEN, ML

SCHLUTER, M

机构：

[1] UNIV PIERRE & MARIE CURIE,LAB PHYS SOLIDES,75 PARIS,FRANCE

[2] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

[3] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.35.1746

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1746 / 1748

页数：3

共 17 条

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[3]

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[4] PARITY ASSIGNMENTS AT L IN LEAD-SALT SEMICONDUCTORS [J].

DALVEN, R .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :66-68

[5] BAND SEPARATIONS AND PARITY AT L POINT IN PBTE BY ELECTROREFLECTANCE [J].

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[6]

Herman F., 1968, J PHYS PARIS S, V29, P62

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[8] DEBYE-WALLER FACTORS AND PBTE BAND-GAP TEMPERATURE DEPENDENCE [J].

KEFFER, C ;

HAYES, TM ;

BIENENSTOCK, A .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1966-+

[9] ELECTRONIC-STRUCTURE OF PBSE AND PBTE .1. BAND STRUCTURES, DENSITIES OF STATES, AND EFFECTIVE MASSES [J].

MARTINEZ, G ;

SCHLUTER, M ;

COHEN, ML .

PHYSICAL REVIEW B, 1975, 11 (02) :651-659

[10] ELECTRONIC STRUCTURE OF PBS, PBSE, AND PBTE [J].

OVERHOF, H ;

ROSSLER, U .

PHYSICA STATUS SOLIDI, 1970, 37 (02) :691-&

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