RESONANT RAMAN-SCATTERING IN SILICON

被引：174

作者：

RENUCCI, JB ^{[1
]}

TYTE, RN ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.11.3885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3885 / 3895

页数：11

共 35 条

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[8]

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[9]

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[10]

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