MOCVD CHALLENGE FOR III-V SEMICONDUCTOR-MATERIALS FOR PHOTONIC AND ELECTRONIC DEVICES ON ALTERNATIVE SUBSTRATES

被引：11

作者：

RAZEGHI, M

DEFOUR, M

OMNES, F

MAUREL, P

BIGAN, E

ACHER, O

NAGLE, J

BRILLOUET, F

PORTAL, JC

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

[2] CNRS,INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90619-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：776 / 781

页数：6

共 7 条

[1]

BOURBIN Y, 1988, ELECTRON LETT, V24, P222

[2]

POISSON MA, 1984, ELECTRON LETT, V20, P1061

[3] INGAAS PHOTODIODES PREPARED BY LOW-PRESSURE MOCVD [J].

POULAIN, P ;

RAZEGHI, M ;

KAZMIERSKI, K ;

BLONDEAU, R ;

PHILIPPE, P .

ELECTRONICS LETTERS, 1985, 21 (10) :441-442

[4] 1ST OBSERVATION OF QUANTUM HALL-EFFECT IN A GAINASP-INP HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

OMNES, F ;

DEFOUR, M ;

ACHER, O ;

TSUI, D ;

WEI, HP ;

GULDNER, Y ;

VIEREN, JP .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1821-1823

[5] VERY LOW THRESHOLD BURIED RIDGE STRUCTURE LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

BLONDEAU, R ;

KAZMIERSKI, K ;

KRAKOWSKI, M ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :131-133

[6] VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

DEFOUR, M ;

OMNES, F ;

NEU, G ;

KOZACKI, A .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :117-119

[7]

RAZEGHI M, IN PRESS MOCVD CHALL

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