THE EFFECT OF DOPING PROFILE VARIATIONS UPON DEEP-SUBMICROMETER MOSFETS

被引：3

作者：

BREWS, JR

ZHOU, ZY

BUXO, J

机构：

[1] Electrical and Computer Engineering Department, The University of Arizona, Tucson

[2] Motorola, Tempe, AZ 85284, EL510

[3] Motorola, Chandler, AZ 85224, CH300

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00035-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The variations in current induced by variations in the (horizontal) doping profile between channel and drain or source can be described in terms of variations in the effective channel length L(EFF) induced by the variations in the doping profile of source or drain. Sensitivity to profile variations becomes severe as L(EFF) --> 0, because the current in the L(EFF) --> 0 regime depends exponentially on the barrier potential. Likewise, because of the exponential dependence of current on potential in the subthreshold region, sensitivity is particularly strong in subthreshold for variations in the (vertical) channel profile that determines the device threshold and turn-off. The centroid of the vertical profile must be controlled to sub-Debye length accuracy to keep subthreshold current variations below a few percent.

引用

页码：155 / 161

页数：7