ELECTRICAL AND OPTICAL CHARACTERIZATION OF ELECTRON-BEAM EVAPORATED IN2SE3 THIN-FILMS

被引：54

作者：

MICOCCI, G ^{[1
]}

TEPORE, A ^{[1
]}

RELLA, R ^{[1
]}

SICILIANO, P ^{[1
]}

机构：

[1] CNR,IST STUDIO NUOVI MAT ELETTRON,LECCE,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 148卷 / 02期

关键词：

D O I：

10.1002/pssa.2211480211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical and optical measurements are carried out on In2Se3 polycrystalline thin films obtained by electron beam evaporation and thermally annealed at different temperatures. The temperature dependence of Hall mobility and de conductivity is tentatively explained in terms of Petritz's model where the scattering is due to the grain boundaries of the polycrystallites. The effect of grain sizes on the mobility and the barrier height is also reported. The optical results indicate that the absorption mechanism is due to an indirect transition. The energy gap in the as-deposited samples is about 1.40 eV and increases with thermal annealing.

引用

页码：431 / 438

页数：8

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