CARBON IN POLYCRYSTALLINE SILICON, INFLUENCE ON RESISTIVITY AND GRAIN-SIZE

被引：7

作者：

BLOEM, J

CLAASSEN, WAP

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：725 / 726

页数：2

共 10 条

[1] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[2] STABILIZED CVD AMORPHOUS SILICON FOR HIGH-TEMPERATURE PHOTOTHERMAL SOLAR-ENERGY CONVERSION [J].

BOOTH, DC ;

ALLRED, DD ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1979, 2 (01) :107-124

[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J].

CLAASSEN, WAP ;

BLOEM, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :194-202

[4]

GRAFF K, 1977, SEMICONDUCTOR SILICO, P575

[5] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690

[6] CONCENTRATION AND BEHAVIOR OF CARBON IN SEMICONDUCTOR SILICON [J].

NOZAKI, T ;

YATSURUGI, Y ;

AKIYAMA, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1566-+

[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].

SEAGER, CH ;

GINLEY, DS .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1050-1055

[8]

SUZUKI T, 1973, SEMICONDUCTOR SILICO, P191

[9]

VANDERPUTTE P, COMMUNICATION

[10] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J].

WADA, Y ;

NISHIMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1499-1504

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