ENERGY-LEVELS IN IDEAL AND RECONSTRUCTED MODELS OF A SILICON VACANCY

被引：12

作者：

HEGGIE, M

JONES, R

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 31期

关键词：

D O I：

10.1088/0022-3719/14/31/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4603 / 4609

页数：7

共 17 条

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[7]

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[9] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY [J].

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[10] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON [J].

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GERL, M .

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