KINETIC-ANALYSIS OF CHEMICAL VAPOR-DEPOSITION OF BORON-NITRIDE

被引：29

作者：

LEE, WY ^{[1
]}

LACKEY, WJ ^{[1
]}

AGRAWAL, PK ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH CHEM ENGN,ATLANTA,GA 30332

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 10期

关键词：

D O I：

10.1111/j.1151-2916.1991.tb06813.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

BN was deposited on Al2O3 substrates from the BCl3-NH3-Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800-degrees to 1000-degrees-C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first-order dependency on BCl3 concentration. The BN deposition rate increased with temperature, pressure, and BCl3 concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters.

引用

页码：2642 / 2648

页数：7

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