COMPARISON OF THRESHOLD ENERGY OF SELECTIVELY EXCITED YALO3ER AND YAG-ER LASERS

被引：19

作者：

BREGUET, J ^{[1
]}

UMYSKOV, AF ^{[1
]}

SEMENKOV, SG ^{[1
]}

LUTHY, W ^{[1
]}

WEBER, HP ^{[1
]}

SHCHERBAKOV, IA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST GEN PHYS,117942 MOSCOW,USSR

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 11期

关键词：

D O I：

10.1109/3.161313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser performance is studied for YAlO3:Er and YAG:Er lasers that were excited with selective filtering of the pump light. In particular, the influence of the cross-relaxation process W has been studied. The threshold energy for YAlO3:Er is lower than for YAG:Er. This disparity is attributed to the differences in the lifetimes of the laser levels of the two crystals.

引用

页码：2563 / 2566

页数：4

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