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A VARIETY OF OXYGEN-INDUCED RECOMBINATION CENTERS IN 450-DEGREES-C TO 600-DEGREES-C HEAT-TREATED SILICON

被引：4
作者：
GLINCHUK, KD
LITOVCHENKO, NM
PTITSIN, VY
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期
关键词：
D O I：
10.1002/pssa.2210930221
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：565 / 571
页数：7
相关论文
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[16]   DONORLIKE EXCITED-STATES OF THE THERMALLY INDUCED 0.767-EV (P LINE) DEFECT IN OXYGEN-RICH SILICON [J].
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