EPITAXIAL-GROWTH OF CO FILMS AND CO/CU SUPERLATTICES ON SAPPHIRE SUBSTRATES WITH AND WITHOUT BUFFER LAYERS

被引：26

作者：

BROHL, K

BODEKER, P

METOKI, N

STIERLE, A

ZABEL, H

机构：

[1] Institut für Festkörperphysik, Fakultät für Physik und Astronomie, Ruhr Universität Bochum

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

Cobalt - Copper - Epitaxial growth - Metallic superlattices - Molecular beam epitaxy - Sapphire - Substrates - X ray analysis;

D O I：

10.1016/0022-0248(93)90710-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Co(0001)/(111) films and Co/Cu(111) multilayers were grown by MBE on sapphire (1120BAR) substrates. Co grows in a good epitaxial manner directly on the sapphire substrate as well as on a Cu(111)/Nb(110) buffer layer system. Co/Cu(111) superlattices were grown on the same buffer system. Extensive RHEED and X-ray characterizations demonstrate the high film quality.

引用

页码：682 / 685

页数：4

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