REDUCTION OF CARBON IMPURITY IN GAAS BY PHOTOIRRADIATION IN ATOMIC LAYER EPITAXY

被引：5

作者：

IWAI, S

MEGURO, T

ISSHIKI, H

SUGANO, T

AOYAGI, Y

机构：

[1] The Institute of Physical and Chemical Research, RIKEN, Wako-shi, Saitama, 351-01, Hirosawa

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷

关键词：

D O I：

10.1016/0169-4332(94)90415-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaAs was grown by the atomic layer epitaxy (ALE) technique by means of the alternate supply of trimethylgallium for 1 s and arsine (AsH3) with photo irradiation at 530-degrees-C. The substrate surface was irradiated by an infrared lamp in the first half of the AsH3 feed time. The carrier concentration in the ALE layer grown with irradiation for 4 s at 3 W/cm2 during the 7 s AsH3 feed time was reduced to 9 X 10(15) cm-3, which was one thirtieth as low as that without irradiation. The emission intensity associated with carbon impurity in photo-luminescence spectra decreased with the increase of light intensity.

引用

页码：232 / 236

页数：5

共 7 条

[1] CARBON-REDUCTION IN GAAS FILMS GROWN BY LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY [J].