PREPARATION AND PROPERTIES OF GAAS-GAP, GAAS-GE, AND GAP-GE HETEROJUNCTIONS

被引:26
作者
WEINSTEIN, M
BELL, RO
MENNA, AA
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D O I
10.1149/1.2426209
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:674 / 682
页数:9
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共 16 条
[1]  
ANDERSON RL, 1962, J SOLID STATE ELECTR, V5, P341
[2]   EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS [J].
AVEN, M ;
GARWACKI, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :401-407
[3]  
FROSCH CJ, 1961, J ELECTROCHEM SOC, V108, P127
[4]  
FULLER LS, 1962, J ELECTROCHEM SOC, V109, P880
[5]  
GLANG R, 1961, METALLURGICAL SOC C, V15, P27
[6]  
HAGENLOCHER A, 1961, J ELECTROCHEM SOC, V108, pC213
[7]  
HOLONYAK N, 1961, METALLURGICAL SOC C, V15
[8]  
ING SW, 1962, J ELECTROCHEM SOC, V109, P995
[9]   GALLIUM-ARSENIDE DIFFUSED DIODES [J].
LOWEN, J ;
REDIKER, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (01) :26-29
[10]  
LYONS VJ, 1961, J ELECTROCHEM SOC, V108, pC177