THERMALLY ASSISTED TUNNELLING IN CERTAIN GAAS HETEROSTRUCTURES

被引：7

作者：

OWEN, SJT

TANSLEY, TL

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

[2] UNIV NOTTINGHAM,DEPT ELECT & COMP ENGN,LOUGHBOROUGH LE12 5RD,LEICESTERSHIRE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：954 / 960

页数：7

共 35 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

[2]

BETHE HA, 1942, MIT4312 RAD LAB REP

[3]

CROWELL CR, 1966, SOLID STATE ELECT, V9, P695

[4]

CROWELL CR, 1970, SOLID STATE ELECTRON, V12, P89

DONNELLY, JP ;

MILNES, AG .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09) :1468-&

[6]

FRANCOME MH, 1972, THIN SOLID FILMS, V5

GUNDLACH, KH ;

SIMMONS, JG .

[8]

HACKOM R, 1968, IEEE T ELECTRON DEV, V19, P1231

[9]

HOLT DB, 1974, THIN SOLID FILMS, V24, P53

[10]

JAMES LW, 1975, 11TH P IEEE PHOT SPE