HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS

[1] BERMAN HS, 1974, 3RD P INT C SIL CARB, P500

[2] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[3] Conwell E M, 1967, HIGH FIELD TRANSPORT

[4] DEAN PJ, 1964, 7TH P INT C PHYS SEM, P103

[5] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[6] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[7] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[9] SOLUTION OF BOLTZMANN-EQUATION IN ELLIPSOIDAL VALLEYS WITH APPLICATION TO (100) VALLEYS OF GAAS AND GAP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (06): : 976 - 996

[10] ELECTRON-PHONON INTERACTION AND INTER-VALLEY SCATTERING IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18): : 2788 - 2810

[1] BERMAN HS, 1974, 3RD P INT C SIL CARB, P500

[2] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[3] Conwell E M, 1967, HIGH FIELD TRANSPORT

[4] DEAN PJ, 1964, 7TH P INT C PHYS SEM, P103

[5] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[6] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[7] ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1611 - &

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[9] SOLUTION OF BOLTZMANN-EQUATION IN ELLIPSOIDAL VALLEYS WITH APPLICATION TO (100) VALLEYS OF GAAS AND GAP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (06): : 976 - 996

[10] ELECTRON-PHONON INTERACTION AND INTER-VALLEY SCATTERING IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18): : 2788 - 2810