INFLUENCE OF THE ELECTRONIC STATE ON H-TUNNELING IN NIOBIUM

被引：108

作者：

WIPF, H

STEINBINDER, D

NEUMAIER, K

GUTSMIEDL, P

MAGERL, A

DIANOUX, AJ

机构：

[1] WALTHER MEISSNER INST TIEFTEMPERATURFORSCH,GARCHING,FED REP GER

[2] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE

来源：

EUROPHYSICS LETTERS | 1987年 / 4卷 / 12期

关键词：

D O I：

10.1209/0295-5075/4/12/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1379 / 1384

页数：6

共 20 条

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[7]

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