LATTICE-DEFECTS IN SEMICONDUCTING HG1-XCDXTE ALLOYS .1. DEFECT STRUCTURE OF UNDOPED AND COPPER DOPED HG0.8CD0.2TE

被引：173

作者：

VYDYANATH, HR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 12期

关键词：

D O I：

10.1149/1.2127314

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：2609 / 2619

页数：11

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