QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET

被引：86

作者：

KAWAJI, S ^{[1
]}

WAKABAYASHI, J ^{[1
]}

机构：

[1] GAKUSHUIN UNIV, DEPT PHYS, TOSHIMA KU, TOKYO 171, JAPAN

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90144-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：238 / 245

页数：8

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