DOPANT REDISTRIBUTION DURING PD2SI FORMATION USING RAPID THERMAL ANNEALING

被引：2

作者：

ALVI, NS

KWONG, DL

HOPKINS, CG

BAUMAN, SG

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,MICROELECTR RES CTR,AUSTIN,TX 78712

[2] CHARLES EVANS ASSOCIATES,ST MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 21期

关键词：

D O I：

10.1063/1.96880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1433 / 1435

页数：3

共 16 条

[1] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[2]

BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878

[3]

DOWNEY DF, 1982, SOLID STATE TECHNOL, V25, P87

[4] FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS [J].

EIZENBERG, M ;

FOELL, H ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :861-868

[5] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J].

FERTIG, DJ ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1976, 19 (05) :407-413

[6] STUDY OF AL-PD2SI CONTACTS ON SI [J].

GRINOLDS, H ;

ROBINSON, GY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :75-78

[7] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].

HOSACK, HH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485

[8] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J].

HUTCHINS, GA ;

SHEPELA, A .

THIN SOLID FILMS, 1973, 18 (02) :343-363

[9] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].

OHDOMARI, I ;

TU, KN ;

SUGURO, K ;

AKIYAMA, M ;

KIMURA, I ;

YONEDA, K .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1015-1017

[10]

ROZGONYI A, 1983, APPL PHYS LETT, V43, P957

← 1 2 →