学术探索
学术期刊
新闻热点
数据分析
智能评审

EXPERIMENTAL-EVIDENCE FOR SURFACE QUENCHING OF THE SURFACE-PLASMON ON INSB(110)

被引：72
作者：
RITZ, A
LUTH, H
机构：
来源：
PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.52.1242
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1242 / 1245
页数：4
相关论文
共 7 条
[1]  
EGRI I, 1983, SURF SCI, V128, P51, DOI 10.1016/0039-6028(83)90380-1
[2]  
Ibach H., 1982, ELECTRON ENERGY LOSS, P63
[3]   ELECTRON SPIN RESONANCE IN N-TYPE INSB [J].
ISAACSON, RA .
PHYSICAL REVIEW, 1968, 169 (02) :312-&
[4]   LOW-ENERGY ELECTRONIC AND VIBRONIC EXCITATIONS OF SEMICONDUCTOR SURFACES [J].
LUTH, H .
SURFACE SCIENCE, 1983, 126 (1-3) :126-146
[5]   CONDUCTION-BAND SURFACE-PLASMONS IN THE ELECTRON-ENERGY-LOSS SPECTRUM OF GAAS(110) [J].
MATZ, R ;
LUTH, H .
PHYSICAL REVIEW LETTERS, 1981, 46 (07) :500-503
[6]   ELECTRODYNAMICS OF THE BAND-EDGE IN A DIRECT GAP SEMICONDUCTOR [J].
STAHL, A .
SOLID STATE COMMUNICATIONS, 1984, 49 (01) :91-93
[7]   DYNAMICAL DENSITY RESPONSE OF FREE-ELECTRONS IN A BOUNDED SEMICONDUCTOR [J].
STAHL, A .
SURFACE SCIENCE, 1983, 134 (01) :297-308
1