TEMPERATURE EFFECTS ON HIGH-GAIN PHOTOCONDUCTIVE DETECTORS

被引：35

作者：

VILCOT, JP ^{[1
]}

VATERKOWSKI, JL ^{[1
]}

DECOSTER, D ^{[1
]}

CONSTANT, M ^{[1
]}

机构：

[1] UNIV LILLE 1,CNRS,SPECTROCHIM INFRAROUGE & RAMAN LAB 2641,F-59655 VILLENEUVE DASCQ,FRANCE

来源：

关键词：

D O I：

10.1049/el:19840060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：86 / 88

页数：3

共 8 条

[1]

BRU C, 1982, THESIS ORSAY

[2]

DURAI FNS, 1979, EUROPEAN HYBRID MICR

[3]

EVANNO MH, 1983, THESIS LILLE

[4] A PHOTOCONDUCTIVE DETECTOR FOR HIGH-SPEED FIBER COMMUNICATION [J].

GAMMEL, JC ;

METZE, GM ;

BALLANTYNE, JM .

[5] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].

HOUSTON, PA ;

EVANS, AGR .

[6]

KLEIN HJ, 1982, THIN SOLID FILMS, V90, P371, DOI 10.1016/0040-6090(82)90534-X

PANG, YM ;

CHEN, CY ;

GARBINSKI, PA .

[8]

VATERKOWSKI JL, ESSDERC 82 MUNICH