TRAP PARAMETERS IN UNDOPED SPUTTERED A-SI-H FROM TSC

被引：3

作者：

HAMDI, H

DENEUVILLE, A

BUSTARRET, E

机构：

[1] Lab d'Etudes des Proprietes, Electroniques des Solides, Grenoble,, Fr, Lab d'Etudes des Proprietes Electroniques des Solides, Grenoble, Fr

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

HYDROGEN INORGANIC COMPOUNDS - SEMICONDUCTING FILMS - Amorphous - SILICON AND ALLOYS - Hydrogenation;

D O I：

10.1016/0022-3093(85)90750-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A single variable fit of the experimental TSC curves of various undoped sputtered a-Si:H to their analytical expression, yield the parameters of the same discrete traps at 0. 18 ev, 0. 36 ev and 0. 66 ev. This suggests Si structural defects in an inhomogeneous material.

引用

页码：683 / 686

页数：4

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