HIGH-PERFORMANCE AL0.48IN0.52AS/GA0.47IN0.53AS MSM-HEMT RECEIVER OEIC GROWN BY MOCVD ON PATTERNED INP SUBSTRATES

被引：26

作者：

HONG, WP

CHANG, GK

BHAT, R

GIMLETT, JL

NGUYEN, CK

SASAKI, G

KOZA, M

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

D O I：

10.1049/el:19891049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1561 / 1563

页数：3

相关论文

共 7 条

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[2] CROW JD, 1989, OFC 89, P83
[3] MOCVD-GROWN ALLNAS/GALNAS MODFET WITH DRAIN CURRENTS HIGHER THAN 1.3A/MM
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[4] Nobuhara H., 1988, Electronics Letters, V24, P1246, DOI 10.1049/el:19880848
[5] NOBUHARA H, OPTOELECTRON DEV TEC, V2, P303
[6] NEW FABRICATION TECHNOLOGY FOR LONG-WAVELENGTH RECEIVER OEICS
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BLAND, SW
[J]. ELECTRONICS LETTERS, 1989, 25 (02) : 156 - 157
[7] VERY HIGH-SPEED GAINAS METAL-SEMICONDUCTOR-METAL PHOTODIODE INCORPORATING AN ALLNAS/GALNAS GRADED SUPERLATTICE
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (01) : 16 - 17