TSEE FROM ION-IMPLANTED LIF CRYSTALS

被引:4
作者
KAWANISHI, M [1 ]
KAKIAGE, T [1 ]
KIDO, Y [1 ]
ODA, K [1 ]
YAMAMOTO, T [1 ]
机构
[1] TOYOTA CENT RES & DEV LABS INC,NAGAKUTE,AICHI 48011,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷
关键词
D O I
10.7567/JJAPS.24S4.225
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:225 / 228
页数:4
相关论文
共 5 条
[1]  
GLAEFEKE H, 1983, RADIAT PROT DOSIM, V4, P243
[2]  
Kawanishi M., 1984, Radiation Protection Dosimetry, V6, P213
[3]  
KAWANISHI M, 1979, 6TH P INT S EX EM DO, P34
[4]  
OBERHOFER M, 1979, APPLIED THERMOLUMINE, P103
[5]  
TOWNSEND PD, 1976, ION IMPLANTATION SPU