DISTORTION EVALUATION OF NICKEL STENCIL MASKS WITH THE HELP OF ION PROXIMITY EXPOSURES AND REGISTRATION MEASUREMENTS ON THE LEITZ LMS-2000

被引:1
作者
RANGELOW, IW
LAHR, V
KASSING, R
BLASINGBANGERT, C
ROTH, KD
BOSCH, G
CHALUPKA, A
FISCHER, R
LOSCHNER, H
NOWAK, R
TRAHER, C
STENGL, G
KRAUS, H
BAYER, E
机构
[1] Institute of Technical Physics, University of Kassel, Kassel
[2] Leica, Mikroskopie and Systeme GmbH, Wetzlar
[3] IMS-Ion Microfabrication Systems GmbH, Vienna
[4] Dr. Johannes Heidenhain GmbH, Traunreut
关键词
D O I
10.1016/0167-9317(93)90091-I
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A metrology has been developed to evaluate the distortion of large area stencil masks under ion beam exposure. In an ion projector an ion beam proximity printing was performed with a 85 mm diameter beam of 7.5 keV Helium ions. The gap between Nickel stencil test mask and Silicon wafer was 2 mm. Ion beam exposure was done into the surface of 0.8 mum thick AZ-5206 resist with subsequent UV blanket exposure and image reversal development. The Leitz LMS-2000 registration measurement system provided data of the resist pattern to analyse the stencil mask distortion within 25 nm precision and 50 nm accuracy.
引用
收藏
页码:359 / 362
页数:4
相关论文
共 8 条
[1]  
Chalupka, Fegerl, Fischer, Lammer, Loschner, Malek, Nowak, Stengl, Traher, Wolf, Microelectronic Engineering, 17, (1992)
[2]  
Stengl, Bosch, Chalupka, Fegerl, Fischer, Lammer, Loschner, Malek, Nowak, Traher, Vonach, Wolf, EIPB'92, J. Vac. Sci. Technol., (1992)
[3]  
MacIver, J. Electrochem. Soc., 129, (1982)
[4]  
Stangl, Rudenauer, Stengl, Loschner, Maurer, Wolf, Appl. Phys. Lett., 47, 12, (1985)
[5]  
Feindt, Sofronievic, Proc. SPIE, 775
[6]  
Blasing-Bangert, Feindt, Gotz, Leica scientific and technical information, 10, 2, (1991)
[7]  
Buckley, Nester, Windischmann, Proc. Microcircuit Engineering, 80, (1981)
[8]  
Stengl, Bosch, Chalupka, Fegerl, Fischer, Lammer, Loschner, Malek, Mauger, Nowak, Sen, Shimkunas, Traher, Wolf, Wolfe, EIBP'92, J. Vac. Sci. Technol., (1992)