ENDOR INVESTIGATION OF TELLURIUM DONORS IN SILICON

被引：29

作者：

NIKLAS, JR

SPAETH, JM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 02期

关键词：

D O I：

10.1016/0038-1098(83)90592-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：121 / 126

页数：6

共 19 条

[1] EFFICIENT COMPUTATION OF POLYNOMIAL SMOOTHING DIGITAL-FILTERS [J].

BROMBA, MUA ;

ZIEGLER, H .

ANALYTICAL CHEMISTRY, 1979, 51 (11) :1760-1762

[2] APPLICATION HINTS FOR SAVITZKY-GOLAY DIGITAL SMOOTHING FILTERS [J].

BROMBA, MUA ;

ZIEGLER, H .

ANALYTICAL CHEMISTRY, 1981, 53 (11) :1583-1586

[3] TELLURIUM DONORS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

ENNEN, H ;

SCHIRMER, O ;

SCHNEIDER, J ;

WORNER, R ;

HOLM, C ;

SIRTL, E ;

WAGNER, P .

PHYSICAL REVIEW B, 1981, 24 (08) :4571-4586

[4] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[5] DEEP SULFUR-RELATED CENTERS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4212-4217

[6] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[7] SENSITIVITY ENHANCEMENT IN ESR-ENDOR SPECTROMETERS BY USE OF MICROWAVE-AMPLIFIERS [J].

HOENTZSCH, C ;

NIKLAS, JR ;

SPAETH, JM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (08) :1100-1102

[8] CRYSTALLIZATION OF SILICON FROM THE SILICON-CHALCOGEN VAPOR-PHASE [J].

HOLM, C ;

SIRTL, E .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :253-266

[9]

KEMMERINK GJ, 1980, J PHYS C, V41, P435

[10]

KEMMERINK GJ, 1981, THESIS GRONINGEN

← 1 2 →