SIS JUNCTION REACTANCE COMPLETE COMPENSATION

被引：15

作者：

BELITSKY, VY

TARASOV, MA

机构：

[1] Institute of Radio Engineering and Electronics, USSR Academy of Sciences, Moscow 103907, Marx Avenue

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SIS junction geometrical capacitance together with out of phase current I(kk) impedance component forms sufficient junction reactance X(SIS) = (omega-C+B(Q))-1. We suggested the way to resonate out both omega-C and B(Q) by using additional identical SIS junction connected to the first through a long line impedance invertor and RF+DC biased symmetrically to the first. Pumped IV curves without quantum reactance and frequency impedance patterns of the system were calculated. Calculations demonstrated the presence of high and even negative induced dynamic resistance regions at high order quasiparticle steps for the case of SIS junction reactance complete compensation. The suggested method may be used in SIS mixers and detectors for a better RF matching.

引用

页码：2638 / 2641

页数：4

共 11 条

[1]

BELITSKY VY, 1989, JUN ISEC 89 TOK, P179

[2]

BELITSKY VY, 1984, 16 INT S TIEF TEMP P, P15

[3]

CRETE DG, IEEE T MTT, V35, P435

[4]

ERMAKOV AB, 1989, JUN ISEC 89 TOK, P294