DESIGN ANALYSIS OF GAAS DIRECT-COUPLED FIELD-EFFECT TRANSISTOR LOGIC

[1] BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426

[2] Hill C. F., 1968, MICROELECTRONICS, V1, P16

[3] HYUN CH, 1985, JUL P CORN IEEE C AD

[4] HYUN CH, UNPUB ANAL NOISE MAR

[5] LOSTROH J, 1983, IEEE J SOLID STATE C, V18, P803

[6] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[7] SHIMIZU H, 1983, IEEE J SOLID STA OCT, P599

[8] LOW FIELD MOBILITY, EFFECTIVE SATURATION VELOCITY AND PERFORMANCE OF SUB-MICRON GAAS-MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (21) : 909 - 910

[9] ANALYTICAL MODELS OF GAAS-FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 70 - 72

[10] TYULE RL, 1982, IEEE T ELECTRON DEVI, V29, P1032

[1] BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426

[2] Hill C. F., 1968, MICROELECTRONICS, V1, P16

[3] HYUN CH, 1985, JUL P CORN IEEE C AD

[4] HYUN CH, UNPUB ANAL NOISE MAR

[5] LOSTROH J, 1983, IEEE J SOLID STATE C, V18, P803

[6] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217

[7] SHIMIZU H, 1983, IEEE J SOLID STA OCT, P599

[8] LOW FIELD MOBILITY, EFFECTIVE SATURATION VELOCITY AND PERFORMANCE OF SUB-MICRON GAAS-MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (21) : 909 - 910

[9] ANALYTICAL MODELS OF GAAS-FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 70 - 72

[10] TYULE RL, 1982, IEEE T ELECTRON DEVI, V29, P1032