OPTICAL AND ELECTRICAL-PROPERTIES OF VANADIUM-DOPED GAAS

被引：30

作者：

ULRICI, W ^{[1
]}

FRIEDLAND, K ^{[1
]}

EAVES, L ^{[1
]}

HALLIDAY, DP ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 131卷 / 02期

关键词：

D O I：

10.1002/pssb.2221310233

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：719 / 728

页数：10

共 23 条

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[8]

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[9] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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