VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE

被引:316
作者
ALBEN, R
WEAIRE, D
SMITH, JE
BRODSKY, MH
机构
[1] YALE UNIV, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
[2] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1103/PhysRevB.11.2271
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2271 / 2296
页数:26
相关论文
共 71 条
[1]  
ABRAHAM A, 1970, J NON-CRYST SOLIDS, V4, P279
[2]   ONE-BAND DENSITY OF STATES FOR POLK MODEL FOR AMORPHOUS TETRAHEDRALLY BONDED SEMICONDUCTORS [J].
ALBEN, R ;
WEAIRE, D ;
STEINHARDT, P .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :L384-L386
[3]   BAND-STRUCTURE OF SI III AND GE III [J].
ALBEN, R ;
WEAIRE, D ;
THORPE, MF ;
GOLDSTEIN, S .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (02) :545-+
[4]  
ALBEN R, 1974, 5 P INT C AMPH LIQ S, P1231
[5]  
AXE JD, UNPUBLISHED
[6]  
AXE JD, 1974, TETRAHEDRALLY BONDED, P279
[7]  
BELL RJ, 1972, REP PROG PHYS, V25, P1315
[8]  
Born M, 1914, ANN PHYS-BERLIN, V44, P605
[9]   VIBRATIONAL PROPERTIES OF NON-CRYSTALLINE SOLIDS [J].
BOTTGER, H .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (01) :9-42
[10]   INFRARED VIBRATIONAL-SPECTRA OF AMORPHOUS SI AND GE [J].
BRODSKY, MH ;
LURIO, A .
PHYSICAL REVIEW B, 1974, 9 (04) :1646-1651