NONVOLATILE SEMICONDUCTOR MEMORY DEVICES

[1] CHARGE IN SIO2-AL2O3 DOUBLE-LAYERS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1103 - 1106

[2] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[3] AGUSTA B, 1974, Patent No. 3797000

[4] AGUSTA B, 1969, ISCC DIGEST TECH FEB, P38

[5] AGUSTA B, 1973, IBM TECH DISCLOSURE, V15, P2821

[6] AGUSTA B, 1974, DEC INT C LSI CIRC P

[7] AHRONS RW, 1971, Patent No. 3562555

[8] ANESHANSLEY NE, 1973, Patent No. 3771148

[9] ANESHANSLEY NE, 1973, Patent No. 3761901

[10] [Anonymous], COMMUNICATION

[1] CHARGE IN SIO2-AL2O3 DOUBLE-LAYERS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1103 - 1106

[2] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[3] AGUSTA B, 1974, Patent No. 3797000

[4] AGUSTA B, 1969, ISCC DIGEST TECH FEB, P38

[5] AGUSTA B, 1973, IBM TECH DISCLOSURE, V15, P2821

[6] AGUSTA B, 1974, DEC INT C LSI CIRC P

[7] AHRONS RW, 1971, Patent No. 3562555

[8] ANESHANSLEY NE, 1973, Patent No. 3771148

[9] ANESHANSLEY NE, 1973, Patent No. 3761901

[10] [Anonymous], COMMUNICATION